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- W1535979441 abstract "Abstract Epitaxial thin film growth of SrBi2Ta2O9/SrTiO3/Ce0.12Zr0.88O2 on Si was studied, and this epitaxial layer structure was applied to fabrication of ferroelectric-gate field effect transistors (FETs). The films were prepared by a pulsed laser deposition technique and epitaxial growth was identified by x-ray diffraction. The devices exhibited excellent electrical performances: Capacitance-voltage characteristic of a metal-ferroelectric-insulator-semiconductor (MFIS) diode showed a retention longer than 10 days and Id-Vg characteristic of an MFIS-FET showed 1 day retention. It is proved that the crystalline quality of ferroelectric thin films is of great importance to develop integrated devices with high performance." @default.
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- W1535979441 date "2001-01-01" @default.
- W1535979441 modified "2023-09-26" @default.
- W1535979441 title "Epitaxial structure SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub><116> /SrTiO<sub>3</sub><011> /Ce<sub>0.12</sub>Zr<sub>0.88</sub>O<sub>2</sub><001> /Si<001> for ferroelectric-gate FET memory" @default.
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- W1535979441 doi "https://doi.org/10.1080/10584580108010836" @default.
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