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- W1537133090 abstract "This chapter describes some of the noncontact methods that employ optical excitation, such as photomodulated thermoreflectance (PMTR) that can detect local variations in the reflectivity of the material caused by thermal effect and plasma free-carrier recombination. These measurements allow the estimation of certain characteristics such as local electronic and thermal transport parameters, which in the case of implanted semiconductors provide an indication of the local degree of damage as a function of the junction depth. Photomodulated thermoreflectance is an important nondestructive evaluation technique for studying the annihilation process of implanted wafers due to thermal annealing. It has been shown that the PMTR technique is sensitive to various types of short- and long-range disorder annihilation processes. It also has been shown that PMTR is an interesting nondestructive evaluation technique for studying optoelectronic parameters over a wide temperature range. The free-carrier contribution to the PMTR signal becomes more important as temperature decreases. Furthermore, the nature of this contribution changes when amorphization occurs in the implanted layer. The physical mechanism then switches from Drude to the band-filling effect," @default.
- W1537133090 created "2016-06-24" @default.
- W1537133090 creator A5009781564 @default.
- W1537133090 date "1997-01-01" @default.
- W1537133090 modified "2023-10-16" @default.
- W1537133090 title "Chapter 4 Photomodulated Thermoreflectance Investigation of Implanted Wafers. Annealing Kinetics of Defects" @default.
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- W1537133090 doi "https://doi.org/10.1016/s0080-8784(08)60107-6" @default.
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