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- W1538045002 abstract "For 3D monolithic integrated (3DMI) technology, the most important task is to fabricate high performance stackable device and prevent damage on underlying device and structure during processes. In this article, we propose a green nanosecond laser crystallization and laser spike anneal process to fabricate 3D stackable ultra-thin body transistors and realize a sequentially layered integrated circuit. As identified, the possible failure mechanism of underlying device using laser process is the directly penetrated laser light and the heat from the high temperature surface. By optimizing the process conditions and stacking layer thickness, we can reduce the thickness of interlayer dielectric to about 200-nm-thin which quite reducing the delay and power loss from interconnects for 3DIC." @default.
- W1538045002 created "2016-06-24" @default.
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- W1538045002 date "2015-06-01" @default.
- W1538045002 modified "2023-10-17" @default.
- W1538045002 title "Sequentially stacked 3DIC technology using green nanosecond laser crystallization and laser spike annealing technologies" @default.
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- W1538045002 doi "https://doi.org/10.1109/ipfa.2015.7224423" @default.
- W1538045002 hasPublicationYear "2015" @default.
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