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- W153977648 abstract "Factorial experimental design is shown to be useful in extracting the maximum information from the minimum number of experiments. It allows the identification of significant operating parameters which may be used to develop a physical model for the process of interest. Applied to silicon nitride etching in HF, experimental design and allied statistical methods produced a prediction equation which serves as a guideline for minimum nitride mask thicknesses necessary for the selective anodization of silicon to produce porous silicon. The silicon nitride mask was chemically vapor-deposited from a gaseous mixture of ammonia and dichlorosilane to a thickness of approximately 1000 A. The equation derived for silicon nitride thickness change is ..delta..T (A) = 2.55 + 0.65(HF) - 9.3t + 3.2(HF)t, where (HF) is in weight percent and t is in minutes. This equation is valid for the range of HF concentrations from 9 to 49 weight percent and times from 1 to 5 minutes." @default.
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- W153977648 date "1986-05-01" @default.
- W153977648 modified "2023-09-27" @default.
- W153977648 title "Experimental design applied to the etching of silicon nitride in HF solutions" @default.
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