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• W1539881402 abstract "Surface illumination photodiode (PD) shows the tradeoff between quantum efficiency and transit time. This is because a thin absorber region is required for a short carrier transit time whereas a thick absorber region is required for high quantum efficiency. In order to achieve good quantum efficiency the absorption region should be ~2μm, which results in a transit time bandwidth of <12GHz. Waveguide photodiodes can overcome this limitation because the thickness of the absorbing region has little effect on the internal quantum efficiency if the absorber region is long enough. WGPDs, in which the quantum efficiency and transit time are decoupled, can overcome this restriction. In this type of devices, the external quantum efficiency is determined principally by the input coupling efficiency because the internal quantum efficiency can close to 100%. Coupling into WGPDs can be broadly categorized as side-illumination and evanescent coupling. In Figure 1, three types of coupling scheme for WGPDs are shown. Those include a) side illumination type, b) evanescent coupling type, and c) side illumination with a thin absorption/core region. For side illumination, light is focused directly onto the edge of the absorbing layer. With this approach, a responsivity of 0.85A/W and 50-GHz bandwidth has been reported (K. Kato et al, 1992). In the report, he used a multimode waveguide in a transverse direction to acquire a higher coupling efficiency than in a typical p-i-n structure. A primary disadvantage of this type of device is poor optical power capability compared to evanescent coupling approach. Evanescently-coupled photodiodes have demonstrated responsivity up to 0.75A/W with a bandwidth of 42GHz (F. Xia et al, 2001). As another evanescently-coupled photodiode, an etched short multimode graded index waveguide approach has shown a responsivity of 0.96A/W and 40GHz bandwidth (T. Takeuchi et al, 2001). A similar approach that integrates a short planar diluted waveguide with an etched input facet has shown 0.73A/W responsivity and 47GHz bandwidth (M. Achouche et al, 2003). The responsivity of 1.02A/W and 48GHz bandwidth has been achieved with a short multimode input waveguide that consists of a diluted waveguide and two optical matching layers (S. Demiguel et al, 2003). In this chapter, a new WGPD with a thin absorption layer will be introduced. Also, methods of design and optimizations for this new type of WGPD are described. A responsivity of 1.08A/W was achieved at 1550nm wavelength, which corresponds to an external quantum efficiency of 86.4% with TE/TM polarization dependence less than 0.25dB. For the same device, the bandwidth was ~40GHz. Also, nonlinearity of the device was characterized." @default.
• W1539881402 created "2016-06-24" @default.
• W1539881402 creator A5044722683 @default.
• W1539881402 date "2010-01-01" @default.
• W1539881402 modified "2023-10-16" @default.
• W1539881402 title "Waveguide Photodiode (WGPD) with a Thin Absorption Layer" @default.
• W1539881402 cites W111287547 @default.
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• W1539881402 doi "https://doi.org/10.5772/7145" @default.
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