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• W1540330818 abstract "The phonon-assisted emission of GaAs1 − xBix quantum wells with Bi concentrations up to x = 0.055 is investigated by continuous-wave photoluminescence as a function of lattice temperature and excitation density. Strong carrier–phonon coupling is observed manifesting itself in a Huang–Rhys factor of up to 0.3 depending on the lattice temperature and Bi content. Carriers bound to Bi-clusters are identified to be the origin of the efficient carrier–phonon scattering." @default.
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• W1540330818 date "2012-06-27" @default.
• W1540330818 modified "2023-10-02" @default.
• W1540330818 title "Carrier–phonon coupling in GaAs_1−<i>x</i>Bi_<i>x</i>/GaAs quantum wells" @default.
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• W1540330818 doi "https://doi.org/10.1088/0268-1242/27/8/085012" @default.
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