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- W1540891542 abstract "Publisher Summary This chapter discusses the theory of diffusion of vacancies in metal surfaces. Surface vacancies are responsible for the motion of embedded indium (In) and palladium (Pd) atoms in the copper (Cu)(0 0 1) surface. The density of surface vacancies at room temperature is extremely low, but they diffuse through the surface at an extremely high rate leading to significant diffusion rates of Cu(0 0 1) terrace atoms. In the scanning tunneling microscope (STM) measurements, the rapid diffusion of these vacancies leads to long jumps of embedded tracer atoms. Measurements of the jump length distribution show a shape of the distribution that is consistent. In turn, this shows that the vacancy mediated diffusion process can be accurately described, provided that the interaction between the tracer atom and the surface vacancy is properly taken into account. The role of steps as sources and sinks for surface vacancies is confirmed by measuring the position dependent jump length of embedded indium atoms. Near a step, the jump rate of an indium atom is increased, but at the same time, given the shorter lifetime of vacancies near a step, the jump length is decreased. The effect of vacancy-tracer interaction is discussed in the chapter for two different systems, In/Cu(0 0 1) (attractive interaction) and Pd/Cu(0 0 1) (repulsive interaction). The activation energies that are obtained for these two systems have to be interpreted differently." @default.
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- W1540891542 date "2003-01-01" @default.
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- W1540891542 title "Diffusion of vacancies in metal surfaces: theory and experiment" @default.
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- W1540891542 doi "https://doi.org/10.1016/s1571-0785(03)11012-7" @default.
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