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• W1541034142 abstract "Low-pressure chemical vapor deposition (LPCVD) technique is utilized for SiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> passivation of AlGaN/GaN high-electron-mobility transistors (HEMTs). A robust SiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> / AlGaN interface featuring high thermal stability and well-ordered crystalline structure is achieved by a processing strategy of “passivation-prior-to-ohmic” in HEMTs fabrication. Effective suppression of surface-trap-induced current collapse and lateral interface leakage current are demonstrated in the LPCVD-SiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> passivated HEMTs, as compared with conventional plasma-enhanced chemical vapor deposition-SiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> passivated ones. Energy dispersive X-ray spectroscopy mapping analysis of SiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> /AlGaN interfaces suggests the interface traps are likely to stem from amorphous oxide/oxynitride interfacial layer." @default.
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• W1541034142 date "2015-07-01" @default.
• W1541034142 modified "2023-10-15" @default.
• W1541034142 title "Robust SiN_{<italic>x</italic>}/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiN_{<italic>x</italic>} Layer" @default.
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• W1541034142 doi "https://doi.org/10.1109/led.2015.2432039" @default.
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