FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W1541125015> ?p ?o ?g. }

• W1541125015 abstract "Thin-film preparation and its controlled mastery – specifically of semiconductors – became imperative for modern devices including all kind of applications such as electronics, optoelectronics, photonics, and superconductivity. Many methods and their technological applications have been explored and studied during the last decades (George, 1992, Smith, 1995, Ullrich et al. 1988, Bouchenaki et al., 1991 a, Bouchenaki et al., 1991 b, Ullrich et al., 1992, Ullrich and Kobayashi, 1995): Vacuum evaporation, molecular beam epitaxy (MBE), spray pyrolysis, closed-space deposition, sputtering, and pulsed-laser deposition (PLD). The difference between the latter and the aforementioned methods is that the film deposition process takes place only by photons, which naturally do not effect, alter or contaminate the ambient conditions of the substrate, which is kept in vacuum (typically 10-6 torr≈1.3×10-4 Pa). This feature puts PLD on top of the stoichiometry maintaining thin-film deposition methods. However, theory does not go along with reality all the time because the intrinsic atomic target features might influence the stoichiometry as well – for example PLD of CdS leads most of the time to slightly Cd enriched films. It is presumed that the heavier Cd atoms displace some of the S atoms from their designated target-to-substrate transfer path. This brings us to the basics of PLD – how does it work? The ablating light, which is provided by a pulsed laser, hits the substrate and, in case the convolution of laser fluence (i.e., the incident laser energy by illuminated area and pulse) and absorption is sufficiently high, material is ablated from the target. As an example, the deposition rates vs. fluence for different laser wavelengths of GaAs are shown in Fig. 1. The threshold fluence at 355 nm and 532 nm is at around 0.3 J/cm2, whereas at 1064 nm, the ablation onset requires higher fluence of approximately 0.5 J/cm2 due to weaker absorption of the infrared laser pulses. The qualitative appearance of the rates is the same at all wavelengths. Beyond threshold, the inset in Fig. 1 shows that the ablation rate exponentially increases with the fluence (F), i.e., ∝exp(kF), where k=6.0, 6.7, and 5.9, at 355 nm, 532 nm, and 1064 nm, respectively, followed by a fairly linear growth, which finally turns to a flat saturating rate of the ablated material. However, Fig. 2 shows that the deposition rate depends on the material – apparently the same fluence ablates more material from the ionically bonded IIVI compound CdS than from the covalently bonded III-V compound GaAs. The deposition rates have been recorded with the Sloan 200 monitor using a quartz crystal in the vacuum chamber." @default.
• W1541125015 created "2016-06-24" @default.
• W1541125015 creator A5043312341 @default.
• W1541125015 date "2011-04-19" @default.
• W1541125015 modified "2023-10-14" @default.
• W1541125015 title "Employment of Pulsed-Laser Deposition for Optoelectronic Device Fabrication" @default.
• W1541125015 cites W1483766842 @default.
• W1541125015 cites W1637884049 @default.
• W1541125015 cites W1975723780 @default.
• W1541125015 cites W1979160243 @default.
• W1541125015 cites W1980637081 @default.
• W1541125015 cites W1984176430 @default.
• W1541125015 cites W1988738560 @default.
• W1541125015 cites W1990276958 @default.
• W1541125015 cites W1990448041 @default.
• W1541125015 cites W1994648243 @default.
• W1541125015 cites W1997130952 @default.
• W1541125015 cites W1999857510 @default.
• W1541125015 cites W2001504993 @default.
• W1541125015 cites W2001758619 @default.
• W1541125015 cites W2003526818 @default.
• W1541125015 cites W2007625032 @default.
• W1541125015 cites W2017988484 @default.
• W1541125015 cites W2018565558 @default.
• W1541125015 cites W2023280610 @default.
• W1541125015 cites W2030264391 @default.
• W1541125015 cites W2033706191 @default.
• W1541125015 cites W2037911254 @default.
• W1541125015 cites W2038489601 @default.
• W1541125015 cites W2048621242 @default.
• W1541125015 cites W2058244585 @default.
• W1541125015 cites W2063528267 @default.
• W1541125015 cites W2064608424 @default.
• W1541125015 cites W2072519565 @default.
• W1541125015 cites W2076708298 @default.
• W1541125015 cites W2083226161 @default.
• W1541125015 cites W2091228011 @default.
• W1541125015 cites W2105574004 @default.
• W1541125015 cites W2273339347 @default.
• W1541125015 cites W624456751 @default.
• W1541125015 cites W649592562 @default.
• W1541125015 cites W3203407493 @default.
• W1541125015 doi "https://doi.org/10.5772/14706" @default.
• W1541125015 hasPublicationYear "2011" @default.
• W1541125015 type Work @default.
• W1541125015 sameAs 1541125015 @default.
• W1541125015 citedByCount "0" @default.
• W1541125015 crossrefType "book-chapter" @default.
• W1541125015 hasAuthorship W1541125015A5043312341 @default.
• W1541125015 hasBestOaLocation W15411250151 @default.
• W1541125015 hasConcept C120665830 @default.
• W1541125015 hasConcept C121332964 @default.
• W1541125015 hasConcept C127313418 @default.
• W1541125015 hasConcept C136525101 @default.
• W1541125015 hasConcept C142724271 @default.
• W1541125015 hasConcept C151730666 @default.
• W1541125015 hasConcept C171250308 @default.
• W1541125015 hasConcept C19067145 @default.
• W1541125015 hasConcept C192562407 @default.
• W1541125015 hasConcept C204787440 @default.
• W1541125015 hasConcept C2816523 @default.
• W1541125015 hasConcept C37982897 @default.
• W1541125015 hasConcept C49040817 @default.
• W1541125015 hasConcept C520434653 @default.
• W1541125015 hasConcept C64297162 @default.
• W1541125015 hasConcept C71924100 @default.
• W1541125015 hasConceptScore W1541125015C120665830 @default.
• W1541125015 hasConceptScore W1541125015C121332964 @default.
• W1541125015 hasConceptScore W1541125015C127313418 @default.
• W1541125015 hasConceptScore W1541125015C136525101 @default.
• W1541125015 hasConceptScore W1541125015C142724271 @default.
• W1541125015 hasConceptScore W1541125015C151730666 @default.
• W1541125015 hasConceptScore W1541125015C171250308 @default.
• W1541125015 hasConceptScore W1541125015C19067145 @default.
• W1541125015 hasConceptScore W1541125015C192562407 @default.
• W1541125015 hasConceptScore W1541125015C204787440 @default.
• W1541125015 hasConceptScore W1541125015C2816523 @default.
• W1541125015 hasConceptScore W1541125015C37982897 @default.
• W1541125015 hasConceptScore W1541125015C49040817 @default.
• W1541125015 hasConceptScore W1541125015C520434653 @default.
• W1541125015 hasConceptScore W1541125015C64297162 @default.
• W1541125015 hasConceptScore W1541125015C71924100 @default.
• W1541125015 hasLocation W15411250151 @default.
• W1541125015 hasLocation W15411250152 @default.
• W1541125015 hasOpenAccess W1541125015 @default.
• W1541125015 hasPrimaryLocation W15411250151 @default.
• W1541125015 hasRelatedWork W2051813897 @default.
• W1541125015 hasRelatedWork W2088638037 @default.
• W1541125015 hasRelatedWork W2136418796 @default.
• W1541125015 hasRelatedWork W2163999407 @default.
• W1541125015 hasRelatedWork W2352746946 @default.
• W1541125015 hasRelatedWork W2354654386 @default.
• W1541125015 hasRelatedWork W2368211752 @default.
• W1541125015 hasRelatedWork W2944856388 @default.
• W1541125015 hasRelatedWork W4294349365 @default.
• W1541125015 hasRelatedWork W4313707020 @default.
• W1541125015 isParatext "false" @default.
• W1541125015 isRetracted "false" @default.
• W1541125015 magId "1541125015" @default.
• W1541125015 workType "book-chapter" @default.