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• W1541972668 abstract "This work reports on SiGe HBTs with f/sub T/ of 350 GHz. This is the highest reported f/sub T/ for any Si-based transistor as well as any bipolar transistor. Associated f/sub max/ is 170 GHz, and BV/sub CEO/ and BV/sub CBO/ are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f/sub T/ and f/sub max/ resulting in 270 GHz and 260 GHz, with BV/sub CEO/ and BV/sub CBO/ of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f/sub T/ and f/sub max/ values are also discussed." @default.
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• W1541972668 date "2003-06-26" @default.
• W1541972668 modified "2023-10-18" @default.
• W1541972668 title "SiGe HBTs with cut-off frequency of 350 GHz" @default.
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• W1541972668 doi "https://doi.org/10.1109/iedm.2002.1175952" @default.
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