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• W1542022808 abstract "BGaN epilayers were grown on GaN/sapphire templates in hydrogen atmosphere by metal organic chemical vapor deposition (MOCVD). The growth was attempted at different temperatures and flow rates of triethylboron, which was used as boron precursor. According to XRD measurements, up to 2.9% of boron was incorporated in 500 nm-thick BGaN layers deposited at 870 °C. Comparison of XRD results with the red shift observed in the photoluminescence band with increasing boron content confirms an extremely large value of ∼10 eV for the bowing parameter in BGaN." @default.
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• W1542022808 date "2014-12-28" @default.
• W1542022808 modified "2023-09-26" @default.
• W1542022808 title "Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD" @default.
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• W1542022808 doi "https://doi.org/10.1002/pssb.201451560" @default.
• W1542022808 hasPublicationYear "2014" @default.
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