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- W1544156949 abstract "Low energy argon ion and atom beams produced by saddle field sources have been used to study changes in CVD Si3N4/SiO2/Si structures after bombardment of the bare nitride at a particle energy of 2.9 keV. Interface state densities Nst and flatband voltages VFB were extracted from high frequency (1.3 MHz) and quasi-static C-V curves. Bombardment was found to induce an increase in Nst and positive and negative charge storage associated with the nitride (or the nitride/oxide interface). The effect was more pronounced under ion bombardment. On the supposition that displacement damage is similar for ion and atom bombardments the differences in charge storage are interpreted in terms of enhanced trapping under the field associated with ion bombardment." @default.
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- W1544156949 date "1984-02-01" @default.
- W1544156949 modified "2023-10-16" @default.
- W1544156949 title "Damage effects of beam milling on MNOS (Al/Si3N4/SiO2/Si) capacitors" @default.
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- W1544156949 doi "https://doi.org/10.1016/0168-583x(84)90093-4" @default.
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