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- W1544176988 abstract "The threshold power density for Nd‐YAG laser induced recrystallization of 300 mm thick layers in 〈100〉 Si, amorphized by Si implantations, is shown to depend on type and dose of additionally, shallowly implanted impurities." @default.
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- W1544176988 date "1979-01-01" @default.
- W1544176988 modified "2023-09-26" @default.
- W1544176988 title "Elemental and dose dependent threshold for Nd-YAG laser induced recrystallization of silicon" @default.
- W1544176988 doi "https://doi.org/10.1063/1.31676" @default.
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