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- W1544765351 endingPage "9" @default.
- W1544765351 startingPage "1" @default.
- W1544765351 abstract "TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on continuously developed models following the technology progress. In this paper, we compare between experimental and TCAD simulated results of two kinds of nanoscale devices: ultrathin body (UTB) and nanoscale Body (NSB) SOI-MOSFET devices, sharing the same W/L ratio but having a channel thickness ratio of 10 : 1 (46 nm and 4.6 nm, resp.). The experimental transfer I-V characteristics were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a large gate voltage dependent series resistance (<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML id=M1><mml:mrow><mml:msub><mml:mrow><mml:mi>R</mml:mi></mml:mrow><mml:mrow><mml:mtext>SD</mml:mtext></mml:mrow></mml:msub></mml:mrow></mml:math>). TCAD tools do not usually consider<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML id=M2><mml:mrow><mml:msub><mml:mrow><mml:mi>R</mml:mi></mml:mrow><mml:mrow><mml:mtext>SD</mml:mtext></mml:mrow></mml:msub></mml:mrow></mml:math>to be either channel thickness or gate voltage dependent. After observing a clear discrepancy between the mobility values extracted from our measurements and those modeled by the available TCAD models, we propose a new semiempirical approach to model the transfer characteristics." @default.
- W1544765351 created "2016-06-24" @default.
- W1544765351 creator A5000350088 @default.
- W1544765351 creator A5060370214 @default.
- W1544765351 creator A5077454389 @default.
- W1544765351 date "2015-01-01" @default.
- W1544765351 modified "2023-09-23" @default.
- W1544765351 title "Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs" @default.
- W1544765351 cites W1973123137 @default.
- W1544765351 cites W1997711570 @default.
- W1544765351 cites W2008387320 @default.
- W1544765351 cites W2012269293 @default.
- W1544765351 cites W2020330572 @default.
- W1544765351 cites W2041940730 @default.
- W1544765351 cites W2043141080 @default.
- W1544765351 cites W2065577906 @default.
- W1544765351 cites W2079554082 @default.
- W1544765351 cites W2091410677 @default.
- W1544765351 cites W2125045643 @default.
- W1544765351 cites W2132170989 @default.
- W1544765351 cites W4238618429 @default.
- W1544765351 doi "https://doi.org/10.1155/2015/460416" @default.
- W1544765351 hasPublicationYear "2015" @default.
- W1544765351 type Work @default.
- W1544765351 sameAs 1544765351 @default.
- W1544765351 citedByCount "4" @default.
- W1544765351 countsByYear W15447653512016 @default.
- W1544765351 countsByYear W15447653512017 @default.
- W1544765351 countsByYear W15447653512018 @default.
- W1544765351 countsByYear W15447653512020 @default.
- W1544765351 crossrefType "journal-article" @default.
- W1544765351 hasAuthorship W1544765351A5000350088 @default.
- W1544765351 hasAuthorship W1544765351A5060370214 @default.
- W1544765351 hasAuthorship W1544765351A5077454389 @default.
- W1544765351 hasBestOaLocation W15447653511 @default.
- W1544765351 hasConcept C11413529 @default.
- W1544765351 hasConcept C192562407 @default.
- W1544765351 hasConcept C41008148 @default.
- W1544765351 hasConceptScore W1544765351C11413529 @default.
- W1544765351 hasConceptScore W1544765351C192562407 @default.
- W1544765351 hasConceptScore W1544765351C41008148 @default.
- W1544765351 hasLocation W15447653511 @default.
- W1544765351 hasLocation W15447653512 @default.
- W1544765351 hasOpenAccess W1544765351 @default.
- W1544765351 hasPrimaryLocation W15447653511 @default.
- W1544765351 hasRelatedWork W2351491280 @default.
- W1544765351 hasRelatedWork W2371447506 @default.
- W1544765351 hasRelatedWork W2386767533 @default.
- W1544765351 hasRelatedWork W2737498735 @default.
- W1544765351 hasRelatedWork W2744391499 @default.
- W1544765351 hasRelatedWork W2748952813 @default.
- W1544765351 hasRelatedWork W2898370298 @default.
- W1544765351 hasRelatedWork W2899084033 @default.
- W1544765351 hasRelatedWork W303980170 @default.
- W1544765351 hasRelatedWork W4292492973 @default.
- W1544765351 hasVolume "2015" @default.
- W1544765351 isParatext "false" @default.
- W1544765351 isRetracted "false" @default.
- W1544765351 magId "1544765351" @default.
- W1544765351 workType "article" @default.