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• W1544767550 abstract "SUMMARY Ultra shallow low-resistive junction formation has been investigated for sub-100-nm MOSFETs using antimony implantation. The pileup at the Si/SiO2 interface and the resulting dopant loss during annealing is a common obstacle for antimonyand arsenic to reduce junction sheet resistance. Though implanted arsenic gives rise to pileup even with a few seconds duration RTA (Rapid Thermal Annealing), antimonypileup was suppressed with the RTA at relativelylow temperature, such as 800 ◦ C or 900 ◦ C. As a result, low sheet resistance of 260 Ω/sq. was obtained for a 24 nm depth junction with antimony. These results indicate that antimonyis superior to arsenic as a dopant for ultra shallow extension formation. However, increase in antimonyconcentration above 1 × 1020 cm−3 gives rise to precipitation and it limits the sheet resistance reduction of the antimony doped junctions. Redistribution behaviors of antimonyrelating to the pileup and the precipitation are discussed utilizing SIMS (SecondaryIon Mass Spectrometry ) depth profiles." @default.
• W1544767550 created "2016-06-24" @default.
• W1544767550 creator A5067339298 @default.
• W1544767550 date "2002-05-01" @default.
• W1544767550 modified "2023-09-23" @default.
• W1544767550 title "Ultra-Shallow Junction Formation with Antimony Implantation" @default.
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