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- W1544912034 abstract "Atomic Layer Deposition (ALD) was used to grow single-crystalline epitaxial layers of high-k dielectric oxides on semiconductors with remarkably few defects or traps at the interfaces. La 2 O 3 on GaAs(111) produced record-breaking transistors with both n-and p-channels, and CMOS circuits entirely in GaAs, including inverters, logic circuits and 5-stage ring oscillators. More conventionally oriented GaAs(100) substrates with etched (111) slopes also produced working transistors. ALD also grew single-crystalline epitaxial La 2 O 3 films on Ge(111), and (Ca, Mg)O films on GaN(0001) substrates with high-quality epitaxial interfaces. These processes can be run in commercial ALD reactors using precursors produced by the Dow Chemical Company." @default.
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- W1544912034 date "2015-04-01" @default.
- W1544912034 modified "2023-09-25" @default.
- W1544912034 title "Advanced atomic layer deposition and epitaxy processes (Invited paper)" @default.
- W1544912034 doi "https://doi.org/10.1109/vlsi-tsa.2015.7117593" @default.
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