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- W1547186450 abstract "Light emitting diodes (LEDs) and superluminescent diodes (SLDs) with broad spectral widths have been fabricated by a variety of techniques. Recently, a selective area growth technique has been reported that utilizes growth inhibition from a silicon dioxide mask to control the quantum well (QW) thickness and thus the emission wavelength. In this talk, we report the fabrication of a broad spectrum strained layer InGaAs-GaAs-AlGaAs single quantum well edge emitting LED grown by conventional atmospheric pressure metalorganic chemical vapor deposition (MOCVD) using selective-area growth and regrowth. In the selective-area epitaxy process, a patterned silicon dioxide mask is used to enhance the growth rate in unmasked areas of a substrate. The extent of growth rate enhancement is dependent on the relative area of masked and unmasked regions. With this in mind, we fabricated a dual stripe tapered oxide width mask pattern for the active region regrowth, in order to produce a device with a continuous variation in QW thickness along its length." @default.
- W1547186450 created "2016-06-24" @default.
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- W1547186450 date "2002-12-17" @default.
- W1547186450 modified "2023-09-27" @default.
- W1547186450 title "A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition" @default.
- W1547186450 cites W2058675776 @default.
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- W1547186450 doi "https://doi.org/10.1109/leos.1994.586921" @default.
- W1547186450 hasPublicationYear "2002" @default.
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