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• W1547531539 abstract "Favourable characteristics of silicon dioxide (further referred to as oxide or SiO2) as an almost irreplaceable dielectric in MOS (Metal-Oxide-Semiconductor) components have contributed to a considerable extent to the great success of the technology of manufacturing integrated circuits during the last decades. However, it has been proved that instabilities of electric charge in the gate oxide and at 2 Si SiO  interface, which inevitably occur due to the influence of ionizing radiation (γ and X-radiation, electrons, ions) (IR) and hot carrier injection (which includes Fowler-Nordheim high electric field Stress, avalanche hole injection, avalanche electron injection, and so on (HCI) during the operation of MOS transistors, lead to instabilities of their electric parameters and characteristics and present a serious problem to the reliability of MOS integrated circuits [1-4]. Studying these instabilities, particularly causes and mechanisms responsible for their occurrence, is very significant as it may help the manufacturer define appropriate technological parameters with the aim of increasing their reliability. Considering the rate of development and requirement that the components should be highly reliable, the investigation of their instabilities in normal working conditions is practically impossible. In order to determine, as quickly as possible, mechanisms that cause instabilities, accelerated reliability tests are used and they comprise of the application of strong electric fields (so-called electric stress) in static and impulse modes at room temperature and/or at elevated temperatures. In this context, reliability comprises probability that the component may fulfil its target function during a certain period and under certain conditions, i.e. that it may preserve the electric characteristics and the value of electric parameters under certain exploitation conditions during a certain period. Reliability is defined as a probabilistic category as no failure of the component can be predicted with certainty. Namely, if a group of components manufactured in almost the same conditions is subjected to stress, a smaller number of them will fail earlier (early failure), while a larger number of them will fail later. In order to remove from such a group of components those with the possibility of early failure, a selection procedure is applied to all the components. This procedure consists of a series of" @default.
• W1547531539 created "2016-06-24" @default.
• W1547531539 creator A5008851702 @default.
• W1547531539 creator A5034733050 @default.
• W1547531539 creator A5050919407 @default.
• W1547531539 creator A5081381263 @default.
• W1547531539 date "2012-02-12" @default.
• W1547531539 modified "2023-10-12" @default.
• W1547531539 title "Influence of Ionizing Radiation and Hot Carrier Injection on Metal-Oxide-Semiconductor Transistors" @default.
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• W1547531539 doi "https://doi.org/10.5772/39263" @default.
• W1547531539 hasPublicationYear "2012" @default.
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