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• W1548406879 abstract "Planar ultrathin InAs-channel MOSFETs were demonstrated on Si substrates with gate lengths (L g ) as small as 20 nm. The III-V epitaxial buffer layers were grown on 300 mm Si substrates by metal-organic chemical vapor deposition (MOCVD) and the subsequent InAlAs bottom barriers and InAs channel were grown by molecular beam epitaxy (MBE). The devices at 20 nm L g show high transconductance, ∼2.0 mS/μm at V DS =0.5V." @default.
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• W1548406879 date "2015-04-01" @default.
• W1548406879 modified "2023-09-24" @default.
• W1548406879 title "Ultrathin InAs-channel MOSFETs on Si substrates" @default.
• W1548406879 doi "https://doi.org/10.1109/vlsi-tsa.2015.7117566" @default.
• W1548406879 hasPublicationYear "2015" @default.
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