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• W1549122015 abstract "Nanowire SONOS NAND flash memory array has been introduced and reported for highly scalable device structure. However, since it is hard to bias floating body of memory cells, a reliable erase operation is not easy for nanowire NAND flash memory technology. So, the method using hole current which is generated by Schottky-barrier tunneling has been proposed for erase operation of this structure. however, ON-state cell current degradation caused by schottky barrier can be a drawback of silicide S/D. So, in this paper, we investigate the on-state cell current degradation induced by silicide S/D in the nanowire NAND flash memory device." @default.
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• W1549122015 date "2010-06-01" @default.
• W1549122015 modified "2023-09-24" @default.
• W1549122015 title "Investigation of Current Degradation Induced by Silicide Source/Drain in the nanowire NAND Flash Memory" @default.
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