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• W1549968056 endingPage "7602" @default.
• W1549968056 startingPage "7598" @default.
• W1549968056 abstract "Ge ensuremath{delta} layers, grown by molecular-beam epitaxy (MBE), surfactant-mediated epitaxy, and solid-phase epitaxy were characterized in situ by high-resolution low-energy electron diffraction and post growth by x-ray standing waves. Initial growth of Ge on Si is found to proceed in a double-bilayer fashion. Subsequent Si deposition leads to a bilayer growth mode. MBE Si deposition is accompanied by Si-Ge site exchanges leading to increased interfacial roughening, which can be partially reduced by solid-phase epitaxy and use of surfactants." @default.
• W1549968056 created "2016-06-24" @default.
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• W1549968056 date "1995-03-15" @default.
• W1549968056 modified "2023-09-26" @default.
• W1549968056 title "Interface roughening of Ge δ layers on Si(111)" @default.
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• W1549968056 doi "https://doi.org/10.1103/physrevb.51.7598" @default.
• W1549968056 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/9977342" @default.
• W1549968056 hasPublicationYear "1995" @default.
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