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- W1551179107 abstract "We have investigated chemical-state-resolved in-depth profiles of HfO2/SiOx and HfSiO/SiOxNy films using angular-dependent photoemission spectroscopy and Maximum-entropy method. Maximum-entropy method enables to reproduce the stack structure from angular-dependence of core-level spectra and it is utilized to determine atomic concentration of the interfacial layer. For the HfO2/SiOx film, it is elucidated that the Si+ and Si2+ sub-oxide components are located in the vicinity of Si substrate and Si3+ is distributed around the interfacial layer. In addition, annealing-temperature dependence of in-depth profile for the HfSiO2/SiOxNy film have been demonstrated, which reveals that Si oxide components diffuse from the interfacial SiOxNy layer into the HfSiO layer during annealing." @default.
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- W1551179107 date "2009-01-01" @default.
- W1551179107 modified "2023-09-30" @default.
- W1551179107 title "In-Depth Profile of Hf-Based Gate Insulator Films on Si Substrates Studied by Angle-Resolved Photoelectron Spectroscopy Using Synchrotron Radiation" @default.
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- W1551179107 doi "https://doi.org/10.1384/jsa.15.299" @default.
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