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- W1551275129 abstract "Dense nucleation of small-grain polycrystalline diamond films on Si(100) substrates has been accomplished without the use of any surface pretreatment such as abrasive diamond scratching, surface oil treatments, or diamond-like carbon predeposition. The depositions occurred in a low pressure rf plasma assisted chemical vapor deposition system using mixtures of CF4 and H2. Films deposited at 5 Torr and 850°C on as-received silicon wafers show dense nucleation, well-defined facets, and crystallites which ranged in size from 500 to 10,000 å. X-ray photoelectron spectroscopy and electron energy loss show the films to be diamond with no major impurity and no detectable graphitic component. Raman spectroscopy shows a pronounced 1332 cm-1 line accompanied with a broad band centered about 1500 cm-1. Preliminary data indicates that this process is applicable to substrates other than silicon. This process will have important applications in areas where surface pre-treatments, such as diamond polishing, are not viable." @default.
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- W1551275129 date "1991-01-01" @default.
- W1551275129 modified "2023-09-24" @default.
- W1551275129 title "Dense Nucleation of Polycrystalline Diamond Films Using CF4-H2 Low Pressure rf Discharges" @default.
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- W1551275129 doi "https://doi.org/10.1016/b978-0-444-89162-4.50095-6" @default.
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