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• W1551434285 startingPage "787" @default.
• W1551434285 abstract "Abstract Growth and etching are two processes that go hand in hand to create a wide variety of structures at surfaces. This chapter reviews the basic mechanisms and atomistic processes that govern both growth and etching with a specific emphasis on the surfaces of semiconductors. General introductions to the topics of strain, surface energy and growth modes are given. Growth is treated both under thermodynamic and kinetic control. The general introduction to etching includes discussions of etch morphologies, porous solid formation, ablation and the effects of ion irradiation during etching. To illustrate more concretely the processes involved in growth, two specific case studies (silanes on silicon and III–V compounds) are then reviewed. Finally, three specific case studies of etching systems (dry etching of Si by fluorine, wet etching of Si with HF and wet etching of Si with OH − ) are treated to demonstrate the versatility of etching. An attempt has been made to find some overarching principles that can help us to understand a number of what seem to be disparate unrelated phenomena. Hence, the importance of strain and surface atom relaxations in determining adsorption barriers, diffusion barriers and adsorption energies can help to explain aspects of molecular adsorption and the ordering of islands that form during growth. Applying lessons learned from the interactions of hydrogen with silicon helps us to understand not only the homoepitaxial growth of silicon from silanes but also the etching of silicon by halogens. Finally exploring what initiates reactivity on the H-terminated Si surface by comparing and contrasting the wet etching by fluoride and hydroxide brings about a deeper understanding of both processes." @default.
• W1551434285 created "2016-06-24" @default.
• W1551434285 creator A5002928623 @default.
• W1551434285 date "2008-01-01" @default.
• W1551434285 modified "2023-10-18" @default.
• W1551434285 title "Chapter 16 Growth and Etching of Semiconductors" @default.
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