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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1553128247> ?p ?o ?g. }

• W1553128247 endingPage "97" @default.
• W1553128247 startingPage "1" @default.
• W1553128247 abstract "This dissertation mainly dedicates to explore and develop mid-infrared light sources. In difference with usual expensive and immature InAs-based and GaSb-based materials, we utilized more popular, better thermal conductive InP substrates and employed type-II InGaAs/GaAsSb “W” type quantum wells (QWs). Distinguishing from general type-II hole quantum well, the “W” structure includes barrier layers to confine electrons and to increase electron-hole wavefunction overlap, hence the optical transition rate. Through theoretical calculations changed with structure parameters (such as QWs thickness and GaAsSb composition), a range of 2-3µm emission wavelength can be derived. It also shows a trade-off situation between the extending of emission wavelength and the intensity of optical transition rate, meaning a longer emission wavelength generally accompanied with a decreased optical transition rate, which is an intrinsic feature for the “W” structure. However, at a given emission wavelength, the design with thinner InGaAs and GaAsSb layers and a higher Sb content in GaAsSb is more desirable, which could provide of a larger electron-hole wavefunction overlap. We further used the eight-band k.p theory to calculate the E-k relation and material gain as a function of carrier density. With a proper design, the material gain of a single “W” QW is able to reach above 10^3 cm-1, which is sufficient for general mid-IR lasers applications. We also pointed out that adopting proper compressive strain in hole QW makes a more balanced electron and hole masses that could reduce the transparency carrier density and increase the material gain. In experiments, we grew a series of samples systematically varied with thickness of InGaAs, thickness of GaAsSb and Sb mole fraction in GaAsSb. The photoluminescence (PL) spectra of samples cover the range of 2-2.5 µm at low temperature. The trade-off between optical transition rate and wavelength emission is confirmed as the prediction of the theoretical calculations, where the integrated PL intensity is proportional to the square of electron-hole wavefunction overlap. The samples showed good optical quality that integrated PL intensity only decreases an order from cryogenic temperature to room temperature (RT). For the first time we demonstrated PL emission wavelength longer than 3 µm at RT by the InP-based “W” structure. The type-II band alignment in the “W” structure has been characterized by the power dependent PL measurements. The peak position shifts to shorter wavelength as the excitation power (Pex) increases. It was found the amount of energy shifts does not follow the Pex^1/3 law as most type II structures. The localized states filling effect due to the surface roughness and alloy fluctuation is proposed to explain the observed phenomenon. The calculated results agree well with the experiment results. For the first time we demonstrated the room temperature optically-pumped mid-IR “W” type lasers on InP substrates. The lasing wave length is 2.56 µm, which is known as the longest for the InP-based interband transition, with a threshold pumping power density of ~40kW/cm2. The laser shows a characteristic temperature (T0) of 487.8K as operated below 250K and a T0 of 41.8K as operated near room temperature. This abrupt T0 change and the small T0 at room temperature are considered due to the dominated Auger processes. An Auger coefficient of 1.67x10-27 cm^6/s was estimated via different laser cavity length studies for the extraction of waveguide optical loss and theoretical calculations for the waveguide modal gain. Finally, we propose and evaluate an approach capable of extending the “W” QWs emission wavelengths into 3-5µm regime, which uses a metamorphic buffer layer to shift the lattice constant to ~5.94A and then grows the designed “W” QW structure of In0.7Ga0.3As/ GaSb/In0.7Al0.3As." @default.
• W1553128247 created "2016-06-24" @default.
• W1553128247 creator A5057171108 @default.
• W1553128247 creator A5073103469 @default.
• W1553128247 creator A5075507724 @default.
• W1553128247 creator A5088942939 @default.
• W1553128247 date "2011-01-01" @default.
• W1553128247 modified "2023-09-23" @default.
• W1553128247 title "第二型砷化銦鎵/砷銻化鎵“W”量子井之光學特性及光激發中紅外線雷射之研究" @default.
• W1553128247 cites W1973721903 @default.
• W1553128247 cites W1986851941 @default.
• W1553128247 cites W1987986508 @default.
• W1553128247 cites W2014733093 @default.
• W1553128247 cites W2037569690 @default.
• W1553128247 cites W2043208602 @default.
• W1553128247 cites W2051403096 @default.
• W1553128247 cites W2088314541 @default.
• W1553128247 cites W2134351966 @default.
• W1553128247 hasPublicationYear "2011" @default.
• W1553128247 type Work @default.
• W1553128247 sameAs 1553128247 @default.
• W1553128247 citedByCount "0" @default.
• W1553128247 crossrefType "dissertation" @default.
• W1553128247 hasAuthorship W1553128247A5057171108 @default.
• W1553128247 hasAuthorship W1553128247A5073103469 @default.
• W1553128247 hasAuthorship W1553128247A5075507724 @default.
• W1553128247 hasAuthorship W1553128247A5088942939 @default.
• W1553128247 hasConcept C113603373 @default.
• W1553128247 hasConcept C120665830 @default.
• W1553128247 hasConcept C121332964 @default.
• W1553128247 hasConcept C147120987 @default.
• W1553128247 hasConcept C184779094 @default.
• W1553128247 hasConcept C192562407 @default.
• W1553128247 hasConcept C26873012 @default.
• W1553128247 hasConcept C29169072 @default.
• W1553128247 hasConcept C49040817 @default.
• W1553128247 hasConcept C520434653 @default.
• W1553128247 hasConcept C62520636 @default.
• W1553128247 hasConcept C6260449 @default.
• W1553128247 hasConceptScore W1553128247C113603373 @default.
• W1553128247 hasConceptScore W1553128247C120665830 @default.
• W1553128247 hasConceptScore W1553128247C121332964 @default.
• W1553128247 hasConceptScore W1553128247C147120987 @default.
• W1553128247 hasConceptScore W1553128247C184779094 @default.
• W1553128247 hasConceptScore W1553128247C192562407 @default.
• W1553128247 hasConceptScore W1553128247C26873012 @default.
• W1553128247 hasConceptScore W1553128247C29169072 @default.
• W1553128247 hasConceptScore W1553128247C49040817 @default.
• W1553128247 hasConceptScore W1553128247C520434653 @default.
• W1553128247 hasConceptScore W1553128247C62520636 @default.
• W1553128247 hasConceptScore W1553128247C6260449 @default.
• W1553128247 hasLocation W15531282471 @default.
• W1553128247 hasOpenAccess W1553128247 @default.
• W1553128247 hasPrimaryLocation W15531282471 @default.
• W1553128247 isParatext "false" @default.
• W1553128247 isRetracted "false" @default.
• W1553128247 magId "1553128247" @default.
• W1553128247 workType "dissertation" @default.