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- W1553662814 abstract "The chapter presents a discussion on epitaxial growth techniques and low-temperature epitaxy. The chapter focuses on the low-temperature epi growth of Si and Si1–xGex on silicon (Si), chemical vapor deposition (CVD) machines, growth mechanisms, surface treatment, and in situ doping growth of Si1–xGex/Si heterostructures. Because lowering the growth temperature generates more unexpected contaminations on the Si surface, it is very important to avoid any contamination on the Si surface during transport of the wafer into the reactor and during the wafer's stay in the reactor prior to deposition. To achieve high-quality epi growth of Si, it is essential to remove any contamination on the Si substrate by surface treatment before epi growth. In the molecular beam epitaxy (MBE) process, organic and metallic impurities on the Si surface were removed by wet cleaning, a thin protective oxide layer was formed to passivate the surface against recontamination during wafer transport into the reactor, and then the oxide layer was removed by thermal heating in an ultrahigh vacuum (UHV) environment." @default.
- W1553662814 created "2016-06-24" @default.
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- W1553662814 date "2001-01-01" @default.
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- W1553662814 title "Chapter 4 Epitaxial growth techniques: Low-temperature epitaxy" @default.
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- W1553662814 doi "https://doi.org/10.1016/s0080-8784(01)80182-4" @default.
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