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- W1553979302 abstract "We studied the possibility to prepare a multi quantum well (MQW) structure on a non-planar wet-etched object patterned in (100) GaAs semi-insulating substrate with the aim to develop a QWIP with new normal incidence geometry. A H3PO4-based etching solution was used to pattern GaAs substrate through a strip mask pattern. This yielded 20 µm-deep [0-11]-oriented ridges with good sidewall surface morphology, which was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The non-planar objects were MOCVD (Metalorganic Chemical Vapor Deposition) overgrown with a GaAs/Al0.3Ga0.7As MQW structure including bottom and top n-doped GaAs layers. AFM and SEM study and cross-sectional transmition electron microscopy (TEM) were employed to characterize properties of the heterostructure. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W1553979302 date "2005-03-01" @default.
- W1553979302 modified "2023-10-06" @default.
- W1553979302 title "QWIP structures prepared on wet-etched non-planar GaAs" @default.
- W1553979302 doi "https://doi.org/10.1002/pssc.200460462" @default.
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