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- W1554049818 abstract "The expected performances of n/sup +/p and p/sup +/n indium phosphide solar cells are compared. PC-1D, a quasi-one-dimensional computer program based on solving semiconductor transport equations by a finite-element method, was used to model n/sup +/p and p/sup +/n indium phosphide solar cell structures. The calculations show that the n/sup +/p structure offers a better short-circuit current, but that the p/sup +/n structure offers improved open-circuit voltage and overall gain in cell efficiency. The radiation resistance of p/sup +/n InP cells is compared to that of n/sup +/p cells. It is shown that the conflicting results obtained in experiments indicate the need for a systematic reevaluation of the comparative radiation resistance of the two InP cell configurations. >" @default.
- W1554049818 created "2016-06-24" @default.
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- W1554049818 date "2002-12-09" @default.
- W1554049818 modified "2023-09-22" @default.
- W1554049818 title "Comparison of n/sup +/p and p/sup +/n structures in indium phosphide solar cells" @default.
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- W1554049818 doi "https://doi.org/10.1109/iciprm.1991.147320" @default.
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