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- W1554700454 abstract "Over the past few years, CMOS Silicon-oninsulator (SOI) has emerged as the dominant technology for RF switches in RF front end modules for cell phones and WiFi. RF SOI technologies were created from silicon processes originally used for high speed logic applications, but the technology was modified to meet the performance needs of RF switches. The RF SOI technologies have been improved to follow the evolving system requirements for insertion loss, isolation, voltage tolerance, linearity, integration and cost. In this paper, the performance results of the latest generations of RF SOI switch technologies from IBM are reviewed and technology elements that contribute to improved performance are discussed. Future improvements are also discussed." @default.
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- W1554700454 date "2015-01-01" @default.
- W1554700454 modified "2023-10-13" @default.
- W1554700454 title "Improvements in SOI technology for RF switches" @default.
- W1554700454 cites W2106062772 @default.
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- W1554700454 doi "https://doi.org/10.1109/sirf.2015.7119865" @default.
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