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- W1554963911 abstract "Silicon (Si) thin films on glass substrates have been extensively developed as a semiconductor material for electronic devices. This material is especially useful for largearea panel devices such as thin-film transistors (TFTs) on active-matrix flat panel displays. The most widely used Si films are hydrogenated amorphous Si (a-Si:H), which can be deposited at temperatures lower than the strain point of the substrate. However, improved electronic properties are required to achieve higher device performance. Using polycrystalline Si (poly-Si) films instead of a-Si:H films enhances carrier mobility by two or three orders of magnitude; thus, driver circuits can be incorporated into display panels, as shown in Fig. 1. The application of poly-Si will be extended to mobile displays with large pixel density, microprocessor–display combined panels, and thin-film solar cells." @default.
- W1554963911 created "2016-06-24" @default.
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- W1554963911 date "2012-09-19" @default.
- W1554963911 modified "2023-10-06" @default.
- W1554963911 title "Oriented Lateral Growth and Defects in Polycrystalline-Silicon Thin Films on Glass Substrates" @default.
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- W1554963911 doi "https://doi.org/10.5772/37040" @default.
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