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- W1555111325 abstract "Simultaneous numerical solution of Schrödinger’s and Poisson’s equations is used to show that a narrow triangular Ge composition profile graded to a peak value of 100% with rise and fall lengths of just 2 nm can provide very effective subsurface hole confinement in a heterostructure Si1−xGex channel p metal-oxide-semiconductor field effect transistor (pMOSFET). This result is confirmed by analysis of MOS capacitor C-V curves for experimental devices fabricated using a very low thermal budget process on substrates grown by ultrahigh vacuum chemical vapor deposition. Unfortunately, transconductance measurements on experimental long-channel MOSFETs indicate that the peak low-field mobility of holes in the buried channel is just 132 cm2 V−1 s−1, slightly lower than that for a typical surface channel Si MOSFET. Buried channel hole mobilities up to 262 cm2 V−1 s−1 were obtained for reference devices fabricated using the same process with more conventional wide triangular composition profiles graded to a peak Ge content of 40%." @default.
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- W1555111325 date "1998-03-01" @default.
- W1555111325 modified "2023-10-16" @default.
- W1555111325 title "Heterostructure Si1−xGex channel pMOSFETs with high Ge concentration" @default.
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- W1555111325 doi "https://doi.org/10.1116/1.581024" @default.
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