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- W1556678471 abstract "Publisher Summary This chapter discusses the new achievements in the field of infrared devices based on antimony compounds. On comparison with other materials systems highlights the recent advance of III–V antimonide structures. The advances have been dramatic in the case of infrared lasers, where improved performance is linked with the suppression of nonradiative Auger recombination by band structure engineering associated with the introduction of thin InAs layers into the devices and associated type II band alignments at the interfaces. The energy band structure can be adjusted by strain and the transition energy can be controlled by varying the thickness of the layer, which may result in better uniformity over a larger area. The III–V materials have stronger chemical bonds and are, therefore, more attractive than II–VI compounds provided that the same range of bandgaps can be covered. The introduction of epitaxial growth methods has widened the range of material combinations available." @default.
- W1556678471 created "2016-06-24" @default.
- W1556678471 creator A5040185326 @default.
- W1556678471 creator A5055122222 @default.
- W1556678471 date "2001-01-01" @default.
- W1556678471 modified "2023-09-27" @default.
- W1556678471 title "Antimony-based infrared materials and devices" @default.
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