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• W1556734798 abstract "In Fe 1 − x Ti x O 3 + x ∕ 2 (0.5⩽x⩽0.75) has an interesting crystal structure for a magnetic semiconductor because it is composed of In–O layers and (Fe,Ti)–O layers in which the former may work as the electron transport layers, while the latter may work as the magnetic layers. Herein we report epitaxial film growth of InFe0.33Ti0.67O3.33 (IFTO) using pulsed laser deposition and post-annealing. High-quality epitaxial IFTO films with an atomically flat terrace-and-step structure are fabricated on (0001) sapphire substrates. IFTO is an indirect transition-type semiconductor with an optical band gap of ∼2.9eV. The room-temperature electrical conductivity is less than 10−8Scm−1. Carrier doping by aliovalent ion addition, hydrogen reduction, and so on did not generate more free carriers, which may be due to the localized nature of the unoccupied states in IFTO. The Fe ions have the high-spin configuration of Fe3+ and an antiferromagnetic interaction is observed between the Fe3+ ions. A spin-glass state is observed at ⩽5K." @default.
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• W1556734798 date "2007-05-15" @default.
• W1556734798 modified "2023-09-26" @default.
• W1556734798 title "Epitaxial film growth, optical, electrical, and magnetic properties of layered oxide In3FeTi2O10" @default.
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• W1556734798 doi "https://doi.org/10.1063/1.2734953" @default.
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