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• W1557198936 abstract "The resistance R of a high density network of 6 nm diameter Bi wires in porous Vycor glass is studied in order to observe its expected semiconductor behavior. R increases from 300 K down to 0.3 K. Below 4 K, where R varies approximately as ln(1/T), the order-of-magnitude of the resistance rise, as well as the behavior of the magnetoresistance are consistent with localization and electron-electron interaction theories of a one-dimensional disordered conductor in the presence of strong spin-orbit scattering. We show that this behaviour and the surface-enhanced carrier density may mask the proposed semimetal-to-semiconductor transition for quantum Bi wires." @default.
• W1557198936 created "2016-06-24" @default.
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• W1557198936 date "1999-12-15" @default.
• W1557198936 modified "2023-09-27" @default.
• W1557198936 title "Electronic transport in a three-dimensional network of one-dimensional bismuth quantum wires" @default.
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• W1557198936 doi "https://doi.org/10.1103/physrevb.60.16880" @default.
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