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- W1557390080 abstract "At frequencies in the mm-wave region losses in metallic conductors of microstriplines are known to be exceeding substrate losses if highly resistive silicon (in this case 100 oriented, FZ p-type, 5-7 kΩcm) is used. It is thus necessary to preserve the high substrate resistivity in the proximity of the striplines during all processing steps. Future SIMMWICCMOS circuits, such as a RF-front ends with accompanying signal processing will require the proximity of waveguiding structures such as microstriplines and CMOS areas. The required minimum lateral separation between a microstripline and highly doped surface areas is determined to be approximately equal to the substrate height." @default.
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- W1557390080 date "1997-09-22" @default.
- W1557390080 modified "2023-09-23" @default.
- W1557390080 title "Influence of CMOS-circuit areas on RF-damping of gold and aluminium microstripline in combined SIMMWIC-CMOS technology" @default.
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- W1557390080 doi "https://doi.org/10.1109/essderc.1997.194533" @default.
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