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• W1559921135 abstract "In this paper, Poisson-Schrödinger simulations of bulk MOSFETs with an InGaAs channel, including traps and nonparabolicity, are compared against experimental data. These simulations are later used to validate a compact model for the inversion charge in the channel as a function of the gate voltage. Finally, an expression for the long-channel drain current is derived from this inversion charge model, and confirmed with experimental data. This current model, adapted for alternative channel devices, is suitable for the evaluation of III-V MOSFET performance." @default.
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• W1559921135 date "2015-07-01" @default.
• W1559921135 modified "2023-10-16" @default.
• W1559921135 title "Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity" @default.
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• W1559921135 doi "https://doi.org/10.1109/tnano.2015.2444653" @default.
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