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- W1560406570 abstract "结合声表面波和光致发光谱在低温(15K)下对非故意掺杂的GaAs(110)量子阱结构的发光特性进行了研究.实验结果表明，由于声表面波的作用GaAs(110)量子阱的发光强度减弱,并且其对应的重空穴能级出现了分裂的现象，当施加的声波强度P rf 达到20dBm时，能级分裂ΔE达到了10meV.进一步讨论了声表面波对GaAs(110)量子阱圆偏振光自旋注入的影响." @default.
- W1560406570 created "2016-06-24" @default.
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- W1560406570 date "2006-01-01" @default.
- W1560406570 modified "2023-09-25" @default.
- W1560406570 title "Photoluminescence of GaAs(110) quantum wells modulated by surface acoustic waves" @default.
- W1560406570 doi "https://doi.org/10.7498/aps.55.4327" @default.
- W1560406570 hasPublicationYear "2006" @default.
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