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- W1562004144 abstract "In this work plasma enhanced chemical vapor deposition (PECVD) were adopted to achieve boron/phosphorous (B/P) doped silicon oxynitride (SiON) layers. By adjusting the flow rates of corresponding gas precursor (PH3/Ar or B2H6/Ar), SiON layers with different B or P concentrations were obtained. Measurements by X-ray photoelectron spectroscopy (XPS) have shown that PH3 can result in more efficient doping in the layers than B2H6. Compared with B-doped samples, reduction of the hydrogen content can be more easily observed in P-doped SiON layers, as been confirmed by Fourier transform infrared spectroscopy. Hydrogen-related chemical bonds became undetectable after annealing of samples at temperatures as low as 700°C. These results are quite helpful to further research on B/P co-doped SiON layers in application of integrated optical waveguide devices." @default.
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- W1562004144 date "2009-11-05" @default.
- W1562004144 modified "2023-09-27" @default.
- W1562004144 title "Comparison of SiON Layers Doped with Phosphorous and Boron for Integrated Optics Applications" @default.
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