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- W1562632424 abstract "The effects of the nitrogen in the HfSiON gate dielectric on the electrical and thermal properties of the dielectric were investigated. It is clearly demonstrated that nitrogen enhances the dielectric constant of silicates. High dielectric constants of the HfSiON are maintained and boron penetration is substantially suppressed in the HfSiON during high temperature annealing. These properties are ascribed to the homogeneity of the bond structure in the film containing nitrogen through high temperature annealing." @default.
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- W1562632424 date "2003-06-25" @default.
- W1562632424 modified "2023-09-23" @default.
- W1562632424 title "Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics" @default.
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- W1562632424 doi "https://doi.org/10.1109/iedm.2002.1175970" @default.
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