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- W1565209224 abstract "This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells." @default.
- W1565209224 created "2016-06-24" @default.
- W1565209224 creator A5076261351 @default.
- W1565209224 date "1993-04-01" @default.
- W1565209224 modified "2023-10-12" @default.
- W1565209224 title "Low-Cost, High-Efficiency Solar Cells Utilizing GaAs-on-Si Technology, Annual Subcontract Report, 1 August 1991 - 31 July 1992" @default.
- W1565209224 doi "https://doi.org/10.2172/6836731" @default.
- W1565209224 hasPublicationYear "1993" @default.
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