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- W1565314377 abstract "Silicidation of the top surface of Si tips with a Nb gate structure has been carried out to improve the emission behavior of Si field emitter arrays (FEAs). A Pt layer with a thickness of 5–10 nm was deposited through the gate opening and annealed at 850 °C. The electron emission was enhanced by a factor of 10 and the average emission per tip was 3.5 μA for a 10×10 FEA. Fowler–Nordheim plots indicated the decrease in work function after silicidation." @default.
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- W1565314377 date "1997-01-01" @default.
- W1565314377 modified "2023-09-27" @default.
- W1565314377 title "Electron emission from gated silicide field emitter arrays" @default.
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- W1565314377 doi "https://doi.org/10.1109/ivmc.1997.627597" @default.
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