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• W1565926677 abstract "Some recent advances and promising results of GaN technology developed by AMS are presented in this work. Due to the wide band-gap properties of this material, these devices are very well suited for high power applications, and must be characterized under strongly non-linear and high power conditions. Pulsed DC characterization and load-pull measurements have been performed on HEMT devices with different layouts and processes, in order to improve and refine the fabrication methodology. AMS devices show a good technology maturity, with performances comparable with state of the art" @default.
• W1565926677 created "2016-06-24" @default.
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• W1565926677 date "2004-01-01" @default.
• W1565926677 modified "2023-09-22" @default.
• W1565926677 title "Fabrication and non-linear load-pull characterization of GaN HEMT on SiC for high power applications" @default.
• W1565926677 hasPublicationYear "2004" @default.
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