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- W1566396535 abstract "Analytical and experimental studies of charge transport and charge buildup in aluminum-implanted SiO/sup 2/ were performed which indicate that both electrons and holes are trapped in the implanted region. Results of an ionizing dose rate study for CMOS devices are presented in which the effects of two low dose rates (0.2 and 70 rads(Si)/sec) are compared. Charge transport studies on pedigreed MOS capacitors were made and results compared to those for similar devices. Detailed measurements of charge transport in radiation-hardened SiO/sup 2/ films were performed as a function of temperature, applied electric field, and time following pulsed excitation. Determinations of SiO/sup 2/ hole mobility were also made as a function of time, temperature, and field. An investigation of charge buildup at low temperatures in radiation-hardened MOS capacitors was performed and severe flatband voltage shifts were noted. Employment of ion-implanted oxides was observed to reduce this effect. A bibliography of published work on neutron-irradiated silicon is included. (GRA)" @default.
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- W1566396535 date "1976-06-01" @default.
- W1566396535 modified "2023-09-27" @default.
- W1566396535 title "Radiation effects on oxides, semiconductors, and devices. Final report May 1975--Apr 1976" @default.
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