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• W1566453041 abstract "Modern communication devices demand challenging specifications in terms of miniaturization, performance, power consumption and cost. Every new generation of radio frequency integrated circuits (RF-ICs) offer better functionality at reduced size, power consumption and cost per device and per integrated function. Passive devices (resistors, inductors, capacitors, antennas and transmission lines) represent an important part of the cost and size of RF circuits. These components have not evolved at the same level of the transistor devices, especially because their performance is strongly degenerated when they scale down in size. The low resistivity silicon used to build the transistors also imposes prohibitive levels of RF losses to these passive devices. Radio frequency microelectromechanical systems (RF MEMS) are enabling technologies capable to bring significant improvement in the electrical performances and expressive size and cost reduction of these functions, with unparallel introduction of new functionalities, unimaginable to attain when using bulky, externally connected discrete components. High quality factor (Q) inductors are amongst ones of the most needed components in RF circuits and at the same time ones that are most affected by thin metallization and substrate related losses, demanding considerable research effort. This thesis presents a contribution toward the development of thick metal fabrication technologies, covering also the design, modeling and characterization of high quality factor and high self-resonant frequency (SRF) RF MEMS passive devices, with a special emphasis on spiral inductors. A new approach using damascene-like interconnect fabrication steps associated to low κ dielectrics (polyimide), highly-conductive thick copper electroplating, chemical mechanical polishing (CMP) and tailored substrate properties delivered quality factors in excess of 40 and self resonant frequencies in excess of 10 GHz, performances in the current state-of-the-art for integrated spiral inductors built on top of silicon wafers. Furthermore, the developed process steps are compatible with back-end processing used to fabricate modern IC interconnects and have a low thermal budget (< 250 °C), what makes it a good choice to build above-IC passives without degenerating the performance of passivated RF-CMOS circuits. Deep reactive ion etching (DRIE) of quartz substrates was also studied for the fabrication of spiral inductors, offering excellent RF performances (Q exceeding 40 and SRF exceeding 7 GHz). A new doubly-functional quartz packaging concept for RF MEMS devices was developed. This technique process both sides of the packaging wafer: the top is used to embed high quality factor copper inductors while the bottom is thermo-mechanically bonded to another RF MEMS wafer, offering a semi-hermetic SU-8 epoxy-based seal. The bonding process was optimized for high yield, to be compatible with SF6-plasma-released MEMS and to present low level of RF losses. Band pass filters for the GSM (1.8 GHz) and WLAN (5.2 GHz) standards were fabricated and characterized by RF measurements and full wave electromagnetic simulations. Although further development is need in order to predict the frequency response accurately, insertion losses as low as 1.2 dB were demonstrated, levels that cannot be usually attained using on-chip passives. Systematic analysis, RF measurements, electromagnetic simulations and equivalent circuit extraction were used to model the behavior of the fabricated devices and establish a methodology to deliver optimum performances for a given technological profile and specified performance targets (quality factor, inductance and frequency bandwidth). A simple yet accurate physics-based analytical model for spiral inductors was developed and proved to be accurate in terms of loss estimation for thick metal layers. This model is capable to accurately describe the frequency-dependent behavior of the device below its first resonant frequency over a large device design space. The model was validated by both measurements and full wave electromagnetic simulations and is well suited to perform numeric optimization of designs. The proposed models were also systematized in a Matlab® toolbox." @default.
• W1566453041 created "2016-06-24" @default.
• W1566453041 creator A5076924408 @default.
• W1566453041 date "2007-01-01" @default.
• W1566453041 modified "2023-09-23" @default.
• W1566453041 title "Copper / low-k technological platform for the fabrication of high quality factor above-IC passive devices" @default.
• W1566453041 cites W126818163 @default.
• W1566453041 cites W12725456 @default.
• W1566453041 cites W1483158368 @default.
• W1566453041 cites W1484515253 @default.
• W1566453041 cites W1487228365 @default.
• W1566453041 cites W1493194275 @default.
• W1566453041 cites W1496710700 @default.
• W1566453041 cites W1507895426 @default.
• W1566453041 cites W1514268133 @default.
• W1566453041 cites W1514430383 @default.
• W1566453041 cites W1515302430 @default.
• W1566453041 cites W1520743461 @default.
• W1566453041 cites W1529915259 @default.
• W1566453041 cites W1532219419 @default.
• W1566453041 cites W1544336176 @default.
• W1566453041 cites W1549156645 @default.
• W1566453041 cites W1554836583 @default.
• W1566453041 cites W1563006700 @default.
• W1566453041 cites W1569173826 @default.
• W1566453041 cites W1575583166 @default.
• W1566453041 cites W1586698348 @default.
• W1566453041 cites W1589527244 @default.
• W1566453041 cites W1598748400 @default.
• W1566453041 cites W1602434886 @default.
• W1566453041 cites W1614056932 @default.
• W1566453041 cites W1624472141 @default.
• W1566453041 cites W1683585697 @default.
• W1566453041 cites W1768841442 @default.
• W1566453041 cites W1785774197 @default.
• W1566453041 cites W1838791540 @default.
• W1566453041 cites W1842853702 @default.
• W1566453041 cites W1850497187 @default.
• W1566453041 cites W1872195429 @default.
• W1566453041 cites W1963808541 @default.
• W1566453041 cites W1967934052 @default.
• W1566453041 cites W1967936854 @default.
• W1566453041 cites W1969278563 @default.
• W1566453041 cites W1971375401 @default.
• W1566453041 cites W1971854634 @default.
• W1566453041 cites W1973881232 @default.
• W1566453041 cites W1974838749 @default.
• W1566453041 cites W1975082169 @default.
• W1566453041 cites W1977631284 @default.
• W1566453041 cites W1977713871 @default.
• W1566453041 cites W1982920541 @default.
• W1566453041 cites W1984341232 @default.
• W1566453041 cites W1984793550 @default.
• W1566453041 cites W1987112725 @default.
• W1566453041 cites W1988720953 @default.
• W1566453041 cites W1989105867 @default.
• W1566453041 cites W1989491178 @default.
• W1566453041 cites W1989547059 @default.
• W1566453041 cites W1991680123 @default.
• W1566453041 cites W1995984759 @default.
• W1566453041 cites W1996948315 @default.
• W1566453041 cites W199706877 @default.
• W1566453041 cites W2007536429 @default.
• W1566453041 cites W2007543257 @default.
• W1566453041 cites W2011901813 @default.
• W1566453041 cites W2013153506 @default.
• W1566453041 cites W2013698118 @default.
• W1566453041 cites W2014519786 @default.
• W1566453041 cites W2018008910 @default.
• W1566453041 cites W2029868221 @default.
• W1566453041 cites W2030372050 @default.
• W1566453041 cites W2032312440 @default.
• W1566453041 cites W2032977447 @default.
• W1566453041 cites W2035711434 @default.
• W1566453041 cites W2036160614 @default.
• W1566453041 cites W2038529815 @default.
• W1566453041 cites W2038595430 @default.
• W1566453041 cites W2038603002 @default.
• W1566453041 cites W2039985554 @default.
• W1566453041 cites W2040276017 @default.
• W1566453041 cites W2045126592 @default.
• W1566453041 cites W2050438295 @default.
• W1566453041 cites W2052573293 @default.
• W1566453041 cites W2056693201 @default.
• W1566453041 cites W2071990439 @default.
• W1566453041 cites W2075891646 @default.
• W1566453041 cites W2078013997 @default.
• W1566453041 cites W2079291492 @default.
• W1566453041 cites W2080264318 @default.
• W1566453041 cites W2080648734 @default.
• W1566453041 cites W2080854208 @default.
• W1566453041 cites W2086889492 @default.
• W1566453041 cites W2093897717 @default.
• W1566453041 cites W2096213641 @default.
• W1566453041 cites W2096698912 @default.
• W1566453041 cites W2096886676 @default.
• W1566453041 cites W2097127222 @default.
• W1566453041 cites W2097628987 @default.
• W1566453041 cites W2097941400 @default.
• W1566453041 cites W2098431489 @default.

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