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- W1566504653 abstract "W and W1-xNx , where x= 15- 22 at%, thin films were grown using the ALD (Atomic Layer Deposition) principle. Growth rate of W films is about 4- 5 monolayers/ cycle at 300- 350 oC. Growth rate of W1-xNx is 0.5 monolayer/cycle at 325- 350 oC. Standard Deviation (STDV) of thickness is about 2% for 20nm layers. Specific resistivity is 180 mW cm for W and as low as 220-340 mWcm for W1-xNx 20nm films. 4- point probe sheet resistivity test is applied to Cu/ Barrier/ SiO2 stacks with ramping temperature. No changes of normalized resistance reflecting Cu-Barrier interaction was measured after 500 oC annealing cycle" @default.
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- W1566504653 date "2003-11-25" @default.
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- W1566504653 title "Atomic layer deposition of W - based layers on SiO2" @default.
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