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- W15667870 abstract "CuInSe2 films were deposited by three source evaporation. The photoelectrical and optical properties of the films deposited at a substrate temperature of 620 – 720 K were studied. The informations on the band gap and absorption coefficient for different Cu/In ratio of the films were obtained and the data were analysed in the light of the existing theories. Direct transition with band gap in the range 0.86 eV to 1.17 eV was observed depending on the Cu to In arrival rates at the substrates. Native defects made the films highly compensated with activated type of conductivity. The carrier concentration determined from the Hall measurement indicated degenerate p-type behaviour. The effective masses of carriers were determined from the thermoelectric power measurement and was found to be 0.71 mo where mo is the free electron mass. CIS/(Cd,2n)S and CIS/CdS/ZnO devices were fabricated and characterised. The overall performances of the devices were seen to depend critically on the preparation conditions and subsequent heat treatment." @default.
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- W15667870 date "1990-01-01" @default.
- W15667870 modified "2023-09-26" @default.
- W15667870 title "PHOTOCONDUCTIVITY AND OPTICAL PROPERTIES OF CuInSe2 FILMS FOR SOLAR CELL APPLICATION" @default.
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- W15667870 doi "https://doi.org/10.1016/b978-0-08-037539-7.50073-9" @default.
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