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- W1566803048 abstract "Abstract : Epitaxial growth GaN films at reasonable rates and at grazing incidence and using conditions similar to those employed for growth in a low energy electron microscope (LEEM) have been achieved. Preliminary phtoluminescence studies showed near band edge luminescence accompanied by yellow luminescence at -2.2eV. In situ experiments in the LEEM at ASU to produce a clean GaN substrate surface for homoepitaxy were performed. Heating the substrate to 880 deg C produced a (lx1) structure with meandering steps on the surface. Cleaning the substrates using a N-atom flux produced different atomic structures depending on the N-atom flux and the substrate temperature. Low N-atom flux gave rise to a structure with clear steps while a higher N-atom flux produced a (3x3) surface with vanishing steps. Growth of GaN on the (3x3) surface produced faceted layers. Additional in situ cleaning research at NCSU of MOCVD- grown GaN/AlN/611-SiC substrates using NH3-seeded supersonic molecular beams was investigated. Surface carbon and oxygen concentrations of-1%, as evidenced by XPS, were achieved by heating at 7300C under a hyperthermal NH3 flux. Oxygen was removed primarily by thermal desorption. In contrast, carbon removal required heating under an NH flux Ex situ AFM reveals a smooth surface with parallel steps after NH3 beam cleaning. 3 Homoepitaxial growth of smooth, highly textured GaN films was accomplished at 7000C by employing a hyperthermal NH3 beam (0.61 eV) and an effusive Ga source." @default.
- W1566803048 created "2016-06-24" @default.
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- W1566803048 date "1997-12-01" @default.
- W1566803048 modified "2023-09-23" @default.
- W1566803048 title "Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AlN, GaN, and SiC Thin Films" @default.
- W1566803048 doi "https://doi.org/10.21236/ada338206" @default.
- W1566803048 hasPublicationYear "1997" @default.
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