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- W1567129654 abstract "Enhancement of Schottky barrier height on n-type GaInAs has been achieved using Be implantation at low energies. These diodes have been used as Schottky-gates for the fabrication of n-channel MESFETs on GaInAs." @default.
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- W1567129654 date "1987-09-01" @default.
- W1567129654 modified "2023-09-23" @default.
- W1567129654 title "MESFETs on N-GaInAs with Barrier Enhanced Schottky Gates" @default.
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