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- W1567233027 abstract "Atomic layer deposited(ALD) Al2O3 /dry-oxidized ultrathin SiO2 films as a high-k gate dielectric grown on 8°off-axis 4H-SiC(0001) epitaxial wafers are investigated in this paper.The metal-insulation-semiconductor(MIS) capacitors,respectively with different gate dielectric stacks(Al2O3/SiO2,Al2O3,and SiO2) are fabricated and compared with each other.The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field(≥12 MV/cm) comparable to SiO2,and a relatively low gate leakage current of1×10-7A/cm2 at an electric field of4 MV/cm comparable to Al2O3.The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage,indicating a less effective charge and slow-trap density near the interface." @default.
- W1567233027 created "2016-06-24" @default.
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- W1567233027 date "2012-01-01" @default.
- W1567233027 modified "2023-10-18" @default.
- W1567233027 title "Investigation of a 4H-SiC metal-insulation-semiconductor structure with an Al_2O_3/SiO_2 stacked dielectric" @default.
- W1567233027 hasPublicationYear "2012" @default.
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