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• W1567271043 abstract "The singled-out purpose of electrostatic discharge (ESD) devices is that these devices should protect electronic circuitry against fast-transient voltage/current spikes. Although the overall signal variation occurs within a nanosecond, the corresponding currents can ramp up to a multi-Ampere level. Fast varying current patterns give rise to equally fast varying induced magnetic fields being proportional to the time rate of change of the current and as a consequence a substantial part of the electric fields can be attributed to the variation of the induced magnetic fields and the full electromagnetic picture is required for understanding the effects of fast-transient input signals. A similar reasoning can be done for high-power switch devices. Continuing the reasoning along these lines: when the fields are varying sufficiently fast, both the induced magnetic fields and electric fields will ultimately have such large components such that the current flow is controlled by both fields. In particular, in semiconductors, the Hall coefficient is directly related to the carrier mobility and therefore self-induced Lorentz force modifications could become appreciable. So far, no simulation tools were available to address these concerns and strictly speaking, without actually computing these effects, we have no clue if it is justified to ignore these subtleties all together or that these effects are really a concern. Recently we have set up the full calculation scheme to address these concerns. [1], [2]. Using the corresponding software implementation extended with appropriate field viewing facilities we can now study in great detail the electromagnetic dynamics of fast transient phenomena. We present an implementation that allows the computation of these self-induced electromagnetic field effects for fast transient phenomena. In general, the key ingredients are (1) the semiconductor device equations (2) modifications thereof to account for the Lorentz force (3) the Maxwell equations to compute the electromagnetic fields. All this is done in the time domain since in the frequency domain the “small-signal” analysis up front excludes high current/voltage signals at the ports. The complementary harmonic approach was also constructed The latter is based on a small-signal analysis and consider all degrees of freedom as ‘phasors’ and an application is given here. We emphasize that the set up is done is such a way that metals, insulators and semiconductors all may be present together in a single problem set up. This requires special attention for constructing the interface conditions between the different materials. However, the benefit of this set up is that now it is possible to address the front-end and the back-end part of the device in an holistic or integrated approach. If back-end current crowding effects are triggered by magnetic fields effects they will impact the current densities inside the front-end part of the design. Such effects can now be studied in detail. We apply this setup to compute the response of an ESD protection device, (see Fig. 1) submitted to a sub-nanosecond transient signal rising up the several amperes. The system of equations that has to be solved corresponds to ∼ 250.000 degrees of freedom." @default.
• W1567271043 created "2016-06-24" @default.
• W1567271043 creator A5067611392 @default.
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• W1567271043 date "2015-06-01" @default.
• W1567271043 modified "2023-09-27" @default.
• W1567271043 title "Integrated front-end/back-end simulation of electromagnetic fields, Lorentz force effects and fast current surges in microelectronic protection devices" @default.
• W1567271043 cites W2013615654 @default.
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• W1567271043 doi "https://doi.org/10.1109/icicdt.2015.7165910" @default.
• W1567271043 hasPublicationYear "2015" @default.
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